Chemical vapor deposition of epitaxial silicon

Details Chemical vapor deposition of epitaxial silicon Chemical vapor deposition of epitaxial silicon

1981-12-30

1984-02-07

Smith, John D.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 427 86, 4272551, 4272555, 427255, 118718, 118719, 118729, 118733, H01L 21205

Patent

active

044301499

ABSTRACT:
A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

REFERENCES:
patent: 3602192 (1971-08-01), Grochowski et al.
patent: 3672948 (1972-06-01), Foehring et al.
patent: 3893876 (1975-07-01), Akai et al.
patent: 4048955 (1977-09-01), Anderson
patent: 4123244 (1978-10-01), Leclercq et al.
"An Analysis of the Gas-Flow Dynamics in a Horizontal CVD Reactor" by S. Berkman et al., Chapter 7, in the text Heteroepitaxial Semiconductors for Electronic Devices, edited by G. W. Cullen et al., 1978, Springer-Berlag, New York.

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