Chemical vapor deposition of a thin film onto a substrate

Details Chemical vapor deposition of a thin film onto a substrate Chemical vapor deposition of a thin film onto a substrate

1994-11-21

1999-01-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

427314, 438778, 438935, 438680, 438681, 438758, C23C 1400

Patent

active

058562400

ABSTRACT:
Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

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