Chemical vapor deposition method of silicon dioxide film

Details Chemical vapor deposition method of silicon dioxide film Chemical vapor deposition method of silicon dioxide film

1993-09-01

1994-11-01

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427579, 4272553, 4272552, 4272551, 427255, 437238, B05D 306, C23C 1600

Patent

active

053606469

ABSTRACT:
A chemical vapor deposition method that utilizes conventional CVD equipment to deposit silicon dioxide films is provided. The method is capable of producing excellent step coverage on substrates with steep step portions. Tetra-ethoxy-ortho-silicate, acetic-acid, and water are independently gasified by gasifiers and are fed into a reaction chamber. The mixed vapor is heated in the chamber to activate a chemical reaction so that high-fluidity tetra-hydroxy-silicon can be uniformly deposited on a semiconductor substrate containing step portions. Subsequently, two water molecules are detached from tetra-hydroxy-silicon in a dehydration process thereby forming silicon dioxide.

REFERENCES:
patent: 4845054 (1989-07-01), Mitchener
patent: 4872947 (1989-10-01), Wang et al.
patent: 4992306 (1991-02-01), Hochberg et al.
patent: 5051380 (1991-09-01), Maeda et al.
Nguyen et al, "Reaction Mechanisms of Plasma- and Thermal-Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films", J. Electrochem. Soc., vol. 137, No. 7, Jul. 1990, pp. 2209-2215.

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