Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2005-04-26
2005-04-26
Meeks, Timothy (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S255320, C427S255350, C427S255360, C438S240000, C438S381000, C438S778000
Reexamination Certificate
active
06884475
ABSTRACT:
The invention includes chemical vapor deposition and physical vapor deposition methods of forming high k ABO3comprising dielectric layers on a substrate, where “A” is selected from the group consisting of Group IIA and Group IVB elements and mixtures thereof, and where “B” is selected from the group consisting of Group IVA metal elements and mixtures thereof. In one implementation, a plurality of precursors comprising A, B and O are fed to a chemical vapor deposition chamber having a substrate positioned therein under conditions effective to deposit a high k ABO3comprising dielectric layer over the substrate. During the feeding, pressure within the chamber is varied effective to produce different concentrations of A at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer. In one implementation, a subatmospheric physical vapor deposition method of forming a high k ABO3comprising dielectric layer on a substrate includes providing a sputtering target comprising ABO3and a substrate to be deposited upon within a physical vapor deposition chamber. A sputtering gas is fed to the chamber under conditions effective to sputter the target and deposit a high k ABO3comprising dielectric layer over the substrate. During the feeding, pressure is varied within the chamber effective to produce different concentrations of B at different elevations in the deposited layer and where higher comparative pressure produces greater concentration of B in the deposited layer.
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Meeks Timothy
Micro)n Technology, Inc.
Wells St. John P.S.
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