Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2005-03-14
2008-08-12
Chen, Bret (Department: 1792)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C117S092000
Reexamination Certificate
active
07410676
ABSTRACT:
A chemical vapor deposition method comprises steps of: a) injecting a source gas into a chamber so that the source gas is adsorbed on a substrate; b) injecting a purge gas into the chamber for a predetermined period of time so that the source gas remaining in the chamber is purged; c) injecting a reactant gas into a plasma generating portion, and generating plasma at the plasma generating portion by applying a first-level RF power source to a RF electrode plate so that radical of the reactant gas is adsorbed on the substrate; d) injecting a purge gas into the chamber for a predetermined period of time so that the reactant gas remaining in the chamber is purged; and e) applying a second-level RF power source to the plasma generating portion at the step a), b) and d) while the steps a) to d) are being repeated.
REFERENCES:
patent: 4971653 (1990-11-01), Powell et al.
patent: 5015331 (1991-05-01), Powell
patent: 5102523 (1992-04-01), Beisswenger et al.
patent: 5304250 (1994-04-01), Sameshima et al.
patent: 5385624 (1995-01-01), Amemiya et al.
patent: 5433787 (1995-07-01), Suzuki et al.
patent: 5562947 (1996-10-01), White et al.
patent: 5670218 (1997-09-01), Baek
patent: 5882414 (1999-03-01), Fong et al.
patent: 5902494 (1999-05-01), Gupta et al.
patent: 5968587 (1999-10-01), Frankel
patent: 5997649 (1999-12-01), Hillman
patent: 6013580 (2000-01-01), Yanagida
patent: 6245396 (2001-06-01), Nogami
patent: 6435428 (2002-08-01), Kim et al.
patent: 6756318 (2004-06-01), Nguyen et al.
patent: 6812157 (2004-11-01), Gadgil
patent: 6838125 (2005-01-01), Chung et al.
patent: 6878402 (2005-04-01), Chiang et al.
patent: 2002/0066411 (2002-06-01), Chiang et al.
patent: 2002/0076507 (2002-06-01), Chiang et al.
patent: 2005/0000937 (2005-01-01), Chiang et al.
patent: 11168094 (1999-06-01), None
Kim Jae-Ho
Park Sang-Joon
Chen Bret
Graybeal Jackson Haley LLP
IPS Ltd.
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