Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-27
2007-02-27
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S685000, C257SE21170, C257SE29143
Reexamination Certificate
active
10855114
ABSTRACT:
CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional metal layer may be formed on the cooled barrier metal layer. The in-situ cooling process is preferably performed inside a cooling chamber installed between first and second transfer chambers, which are separated from each other. The barrier metal layer may be formed inside a CVD process chamber attached to the first transfer chamber, and the additional metal layer may be formed inside another CVD process chamber attached to the second transfer chamber.
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Kang Doo-Won
Lee Hyun-Jong
Lee Kap-Soo
Estrada Michelle
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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