Chemical vapor deposition chamber with a purge guide

Details Chemical vapor deposition chamber with a purge guide Chemical vapor deposition chamber with a purge guide

1994-11-21

1996-05-14

Kunemund, Robert

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118720, 118724, C23C 1600

Patent

active

055163670

ABSTRACT:
Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

REFERENCES:
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4585920 (1986-04-01), Hoog et al.
patent: 4872947 (1989-10-01), Wang et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5198034 (1993-03-01), deBoer et al.
patent: 5228501 (1993-07-01), Tepman et al.
patent: 5231690 (1993-07-01), Soma et al.
patent: 5238499 (1993-08-01), van de Ven et al.

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