Coating apparatus – Gas or vapor deposition
Patent
2000-02-04
2000-11-14
Mills, Gregory
Coating apparatus
Gas or vapor deposition
432235, C23C 1600, C23C 16445
Patent
active
061464619
ABSTRACT:
A chemical vapor deposition apparatus includes a processing chamber formed by an external tube, and an internal tube installed inside the external tube, a wafer boat securable within the processing chamber, and a single gas diffusing nozzle extending vertically within the processing chamber. The gas diffusing nozzle includes an outer tubular member having a closed top end, a diaphragm dividing the interior of the tubular member into two regions disposed side by side, and columns of gas diffusing openings extending through the tubular member on opposite sides of the diaphragm, respectively. The gas infused through the gas diffusing nozzle is forced by the diaphragm to rise up one side region of the tubular member and then descend through the other side region. In this way, the gas is evenly distributed to the wafers situated in the boat. Accordingly, the reaction time necessary for the gas to form identical layers on the wafers is minimized, the quality and reliability of the wafers is improved, and the production rate is increased.
REFERENCES:
patent: 5001327 (1991-03-01), Hirasawa et al.
patent: 5146869 (1992-09-01), Bohannon et al.
patent: 5711816 (1998-01-01), Kirlin et al.
patent: 6022414 (2000-02-01), Miller
An Jae-Hyuck
Kim Tae-Chul
Yang Chang-Zip
MacArthur Sylvia R.
Mills Gregory
Samsung Electronics Co,. Ltd.
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