Chemical treatment to retard diffusion in a semiconductor...

Details Chemical treatment to retard diffusion in a semiconductor... Chemical treatment to retard diffusion in a semiconductor...

2006-07-04

2006-07-04

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S643000

Reexamination Certificate

active

07071103

ABSTRACT:
The present invention provides a method for retarding the diffusion of dopants from a first material layer (typically a semiconductor) into an overlayer or vice versa. In the method of the present invention, diffusion of dopants from the first semiconductor into the overlayer or vice versa is retarded by forming a monolayer comprising carbon and oxygen between the two layers. The monolayer is formed in the present invention utilizing a chemical pretreatment process in which a solution including iodine and an alcohol such as methanol is employed.

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