Chemical treatment of low-k dielectric films

Details Chemical treatment of low-k dielectric films Chemical treatment of low-k dielectric films

2005-01-04

2005-01-04

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Passivating of surface

C438S038000, C438S139000

Reexamination Certificate

active

06838300

ABSTRACT:
A method of forming an integrated circuit including an organosilicate low dielectric constant insulating layer (40) formed of a substitution group depleted silicon oxide, such as an organosilicate glass, is disclosed. Subsequent plasma processing has been observed to break bonds in such an insulating layer (40), resulting in molecules at the surface of the film with dangling bonds. Eventually, the damaged insulating layer (40) includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer (40) to a thermally or plasma activated fluorine, hydrogen, or nitrogen, which reacts with the damaged molecules to form a passivated surface for the insulating layer (40).

REFERENCES:
patent: 6410426 (2002-06-01), Xing et al.
patent: 6576980 (2003-06-01), Shao et al.
patent: 6583046 (2003-06-01), Okada et al.
patent: 6583497 (2003-06-01), Xia et al.

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