Chemical-mechanical polishing techniques and methods of end poin

Details Chemical-mechanical polishing techniques and methods of end poin Chemical-mechanical polishing techniques and methods of end poin

1994-03-02

1995-08-08

Fourson, George

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437 7, H01L 21304

Patent

active

054395518

ABSTRACT:
A semiconductor processing method of detecting polishing end point in a chemical-mechanical polishing planarization process includes the following steps: a) chemical-mechanical polishing an outer surface of a semiconductor substrate using a chemical-mechanical polishing pad; b) during such chemical-mechanical polishing, measuring sound waves emanating from the chemical-mechanical polishing action of the substrate against the pad; c) detecting a change in the sound waves as the surface being chemical-mechanical polished becomes substantially planar; and d) ceasing chemical-mechanical polishing upon detection of the change. Alternately instead of ceasing chemical-mechanical polishing, a mechanical polishing process operational parameter could be changed upon detection of the change and then continuing mechanical polishing with the changed operational parameter. In another aspect of the invention, first and second layers to be polished are provided on a semiconductor wafer. The second layer is in situ measured during polishing to determine its substantial complete removal from the substrate by chemical-mechanical polishing. Such in situ measuring of the second layer during polishing might be conducted by a number of different manners, such as by acoustically, chemically, optically or others. Also claimed is a polishing apparatus for acoustically monitoring polishing action.

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