Chemical mechanical polishing of FeRAM capacitors

Details Chemical mechanical polishing of FeRAM capacitors Chemical mechanical polishing of FeRAM capacitors

1997-11-20

1999-11-02

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438387, 438396, H01L 2170, H01L 218242

Patent

active

059769289

ABSTRACT:
A method of fabricating a ferroelectric capacitor structure by sequentially depositing a bottom electrode layer, a ferroelectric layer and a top electrode layer on a base structure, optionally with deposition of a layer of a conductive barrier material beneath the bottom electrode layer, to form a capacitor precursor structure, and planarizing the capacitor precursor structure by chemical mechanical polishing to yield the ferroelectric capacitor structure, e.g., a stack capacitor or trench capacitor. The process is carried out without dry etching of the electrode layers or dry etching of the ferroelectric layer, to yield ferroelectric capacitors having a very small feature size, as for example between 0.10 and 0.20 .mu.m.

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