Chemical mechanical polishing (CMP) apparatus and CMP method usi

Details Chemical mechanical polishing (CMP) apparatus and CMP method usi Chemical mechanical polishing (CMP) apparatus and CMP method usi

1997-02-27

1998-11-17

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438689, 438690, 438691, 438692, H01L 21304

Patent

active

058376100

ABSTRACT:
A chemical mechanical polishing (CMP) apparatus for planarizing a semiconductor wafer includes a wafer carrier for loading and fixing a semiconductor wafer to be polished and a polishing platen rotating at a constant speed, disposed at a lower portion of the wafer carrier. A polishing pad is provided on an upper surface of the polishing platen, and is in contact with a surface of the semiconductor wafer. A spiral slurry feed line supplies a slurry solution to the polishing pad. An end of the spiral slurry feed line is provided with a plurality of nozzles and the spiral slurry feed line is connected to a deionized water feed line that is opened or closed by a valve. Accordingly, abrasives are prevented from being precipitated, and the slurry solution is uniformly supplied to the semiconductor wafer, to thereby enhance polishing uniformity.

REFERENCES:
patent: 3979239 (1976-09-01), Walsh
patent: 5578529 (1996-11-01), Mullins

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