Chemical/mechanical planarization (CMP) endpoint method using me

Details Chemical/mechanical planarization (CMP) endpoint method using me Chemical/mechanical planarization (CMP) endpoint method using me

1995-10-16

1997-01-28

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566361, 216 84, 216 85, 451 7, 451287, H01L 21461

Patent

active

055974422

ABSTRACT:
An improved and new process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the endpoint for the planarization process is detected by monitoring the temperature of the polishing pad with an infrared temperature measuring device, has been developed. The method allows endpoint to be detected in-situ at the polishing apparatus, without necessity to unload the substrate for visual inspection or performance of specialized, time-consuming, and costly thickness and/or surface topography measurements.

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