Chemical etch solution and technique for imaging a device's...

Radiant energy – Inspection of solids or liquids by charged particles – Methods

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C252S079100, C252S079200, C252S079400, C156S345290

Reexamination Certificate

active

11028833

ABSTRACT:
The present invention provides, in one aspect, a method of imaging a microelectronics device100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device100to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.

REFERENCES:
patent: 6666986 (2003-12-01), Vaartstra
Sheng, T. T., et al., “Delineation of Shallow Junctions in Silicon by Transmission Electron Microscopy,”Journal of the Electrochemical Society, vol. 128, No. 4, Apr. 1981, pp. 881-884.
Cerva, Hans, “Two-dimensional delineation of shallow junctions in silicon by selective etching of transmission electron microscopy cross sections,”J. Vac. Sci. Technol. B, vol. 10, No. 1, Jan./Feb. 1992, 3 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical etch solution and technique for imaging a device's... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical etch solution and technique for imaging a device's..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical etch solution and technique for imaging a device's... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3877906

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.