Chem-mech polishing method for producing coplanar metal/insulato

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156656, 156665, H01L 21304, H01L 21306

Patent

active

049448366

ABSTRACT:
A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes where it is left intact. This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier.
In a second example a substrate having a patterned metallic layer is coated with an insulating layer and then subjected to chem-mech polishing. The structure is coplanarized by the chem-mech removal of the insulating material from the high points of the structure at a faster rate than from the lower points. Optional etch stop layers also may be used.

REFERENCES:
patent: 2933437 (1960-04-01), Loosme
patent: 3009841 (1961-11-01), Faust, Jr.
patent: 3386864 (1968-06-01), Silvestri et al.
patent: 3911562 (1975-10-01), Youmans
patent: 4037306 (1977-07-01), Gutteridge et al.
patent: 4057939 (1977-11-01), Basi
patent: 4233091 (1980-11-01), Kawabe
patent: 4305779 (1981-12-01), Steeves et al.
patent: 4375645 (1983-03-01), Funatsu
patent: 4475981 (1984-10-01), Rea
patent: 4526631 (1985-07-01), Silvestri et al.
IBM Tech. Disc. Bull., vol. 20, No. 11A, Apr. 1978, "Test Site Failure Analysis: Two Levels of Metal for Isolation of Components" C. H. Scrivner, Jr., pp. 4430-4431.
IBM Tech. Disc. Bull., vol. 24, No. 4, Sep. 1981 "Polishing Technique to Remove Aluminum Lands from Semiconductor Chips" C. H. Scrivner, Jr., p. 2138.
IBM Tech. Disc. Bull., vol. 15, No. 6, Nov. 1972, "Planetary `Free` Wafer Polisher" F. E. Goetz et al., pp. 1760-1761.
IBM Tech. Disc. Bull., vol. 24, No. 8, Jan. 1982, "Semiconductor Polishing Composition", E. Mendel, p. 4232.
IBM Tech. Disc. Bull., vol. 23, No. 7A, Dec. 1980, "Semiconductor Polishing Composition", B. Holley et al., p. 2750.
IBM Tech. Disc. Bull., vol. 25, No. 9, Feb. 1983, "Polishing Electroless Nickel", E. Mendel, p. 4758.
IBM Technical Disclosure Bulletin, vol. 26, No. 3A, "Photosensitive Glass for Producing Recessed Metallurgy, Eliminating Need for Planarization" by R. R. Shaw et al., p. 1094, Aug. 1983.
IBM Technical Disclosure Bulletin, vol. 23, No. 4, Sep. 1980 "Reactive Ion Etch Process for Metal Wiring Using a Buried Mask" by J. R. Kitcher, p. 1394.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chem-mech polishing method for producing coplanar metal/insulato does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chem-mech polishing method for producing coplanar metal/insulato, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chem-mech polishing method for producing coplanar metal/insulato will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1397265

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.