Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-09-27
2009-11-17
Souw, Bernard E (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492200, C250S492300, C716S030000
Reexamination Certificate
active
07619230
ABSTRACT:
A charged particle beam writing method includes inputting pattern data for writing a writing region, predicting a writing time for writing the pattern of the pattern data, acquiring, by using a correlation among a time required from a writing start time, the predicted writing time and a base dose of a charged particle beam, a base dose of the charged particle beam after an optional time from a writing start in the case in which the pattern are written, acquiring, by using a correlation among the time required from the writing start time, the predicted writing time and a proximity effect correction coefficient, a proximity effect correction coefficient after an optional time from the writing start in the case in which the pattern are written, calculating, by using the base dose and the proximity effect correction coefficient after the optional time, an exposure dose of the charged particle beam after an optional time from a writing start in the writing time, and writing an optional position in the writing region by using the charged particle beam corresponding to the dose.
REFERENCES:
patent: 5149975 (1992-09-01), Yoda et al.
patent: 5278421 (1994-01-01), Yoda et al.
patent: 6630681 (2003-10-01), Kojima
patent: 6815693 (2004-11-01), Kamijo et al.
patent: 6835937 (2004-12-01), Muraki et al.
patent: 2002/0005494 (2002-01-01), Kamijo et al.
patent: 2003/0146397 (2003-08-01), Yoda et al.
patent: 2004/0089822 (2004-05-01), Ogasawara
patent: 2007/0114453 (2007-05-01), Emi et al.
patent: 2007/0114459 (2007-05-01), Suzuki et al.
patent: 2007/0187624 (2007-08-01), Suzuki et al.
patent: 2007/0192757 (2007-08-01), Emi et al.
patent: 2008/0182185 (2008-07-01), Abe et al.
patent: 2000-267259 (2000-09-01), None
Abe Takayuki
Emi Keiko
Iijima Tomohiro
Suzuki Junichi
Tsurumaki Hideyuki
NuFlare Technology, Inc.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Souw Bernard E
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