Charged particle beam writing apparatus and method thereof,...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C250S492100, C250S492200, C250S306000, C250S307000, C250S397000, C250S3960ML, C430S296000, C430S942000

Reexamination Certificate

active

07608845

ABSTRACT:
A charged particle beam writing apparatus includes a first part configured, based on pattern data, to estimate a total writing time, a second part configured to acquire a base dose at an arbitrary time, after writing start time and within the total writing time by using a first correlation among a time having passed since the writing start time, the total writing time, and the base dose, a third part configured to acquire a fogging effect correction coefficient at the arbitrary time by using a second correlation among the time, the total writing time and the coefficient, a forth part configured to calculate a beam dose at the arbitrary time by using the base dose and the coefficient, a fifth part configured to calculate a beam irradiation time based on the beam dose, a deflector for deflecting the beam, and an aperture for blocking the beam.

REFERENCES:
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patent: 7511290 (2009-03-01), Suzuki et al.
patent: 2007/0114459 (2007-05-01), Suzuki et al.
patent: 2009/0084990 (2009-04-01), Nishimura et al.
patent: 2000-267259 (2000-09-01), None
patent: 3493094 (2003-11-01), None
patent: 10-2004-0002744 (2004-01-01), None
patent: 10-2006-0045074 (2006-05-01), None
Nathan Wilcox, et al., “Electron Beam Lithography Time Dependent Dose Correction for Reticle CD Uniformity Enhancement”, Proc. Of SPIE, vol. 6283, 2006, pp. 628307-1 to 628307-8.

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