Charged particle beam transfer method

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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Details

430 5, 430942, 2504923, G03C 500, A61N 500

Patent

active

058741984

ABSTRACT:
A charged particle beam transfer method is disclosed for use in lithography processes, particularly in processes for the manufacture of semiconductor integrated circuits. A mask pattern is divided into multiple mask subfields separated from one another by a grid of boundary fields. The multiple mask subfields are preferably arrayed in a matrix of rows and columns, which are irradiated with a charged particle beam. Irradiation of the mask subfields transfers the image of each mask subfield to a transfer field on a sensitive substrate, such as the surface of a silicon wafer used in the manufacture of integrated circuits. The position of the transfer fields are adjusted so that the transfer subfields touch each other on the substrate, without being separated by the border fields. Irradiation of the multiple mask subfields is performed in the direction of the columns, in the direction of the rows, or a combination thereof. Some of the mask subfields are arrayed within a limited range on the mask, and are sequentially and cyclically irradiated multiple times to transfer multiple copies of the mask field in the limited range on to the substrate. Within a limited range the particle beam is moved electrostatically, while outside the limited range the beam is moved electromagnetically. Desired transfer images may be divided into multiple complementary mask fields, which are transferred to a single transfer field to from the complete image.

REFERENCES:
patent: 4282437 (1981-08-01), Boie
patent: 4989156 (1991-01-01), Ikenaga
patent: 5079112 (1992-01-01), Berger et al.
patent: 5130213 (1992-07-01), Berger et al.
patent: 5260151 (1993-11-01), Berger et al.
patent: 5523580 (1996-06-01), Davis

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