Charged particle beam exposure method

Details Charged particle beam exposure method Charged particle beam exposure method

1989-10-23

1992-01-21

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430328, 430967, G03C 500

Patent

active

050827626

ABSTRACT:
A method for selectively exposing a resist layer using a charged particle beam to form a desired pattern. The method includes the steps of repeatedly exposing a basic pattern segment using a charged particle beam so as to expose a pattern within a first predetermined region of the resist layer by a main exposure. The pattern within the first predetermined region is a multiple repetition of the basic pattern segment. A second predetermined region of the layer is exposed by auxiliary exposure at an intensity level lower than that of the main exposure. The second predetermined region excludes the central portions of the first predetermined region and includes a region in which a proximity effect occurs due to the main exposure.

REFERENCES:
patent: 4426584 (1984-01-01), Bohlen et al.
patent: 4463265 (1984-07-01), Owen et al.
patent: 4712013 (1987-12-01), Nishimura et al.
patent: 4717644 (1988-01-01), Jones et al.
IBM Technical Disclosure Bulletin, vol. 25, No. 3a, Aug. 1982, New York, U.S. p. 986, N. G. Anantha et al., "Proximity Correction in E-Beam System".

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