Charge trapping nanocrystal dielectric for non-volatile...

Details Charge trapping nanocrystal dielectric for non-volatile... Charge trapping nanocrystal dielectric for non-volatile...

2006-09-05

2006-09-05

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S479000, C438S665000, C257S311000, C257SE29106, C257SE21297, C977S779000, C977S943000

Reexamination Certificate

active

07101760

ABSTRACT:
A layer of nanocrystals for use in making EEPROMs is made by creating a matrix of silicon seeds in annealed silicon oxide atop a thin silicon dioxide layer. Then nanocrystals are grown on the seeds by vapor deposition of silane in a reactor until a time before agglomeration occurs as silicon atoms crystallize on the silicon seeds to form a layer of non-contacting nanocrystals. A protective insulative layer is then deposited over the nanocrystal layer.

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