Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-16
2010-06-08
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S326000, C257S411000, C257SE29309, C257SE21180, C438S287000, C438S288000, C438S258000
Reexamination Certificate
active
07732856
ABSTRACT:
Methods of forming a non-volatile memory device may include forming a tunnel insulating layer on a semiconductor substrate and forming a charge-trap layer on the tunnel insulating layer. A trench may then be formed extending through the tunnel insulating layer and the charge-trap layer and into the semiconductor substrate so that portions of the charge-trap layer and the tunnel insulating layers remain on opposite sides of the trench. A device isolation layer may be formed in the trench, and a blocking insulating layer may be formed on the device isolation layer and on remaining portions of the charge-trap layer. A gate electrode may be formed on the blocking insulating layer, and the blocking insulating layer and remaining portions of the charge-trap layer may be patterned to provide a blocking insulating pattern and a charge-trap pattern between the gate electrode and the semiconductor substrate. Related structures are also discussed.
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Notice of Allowance for Korean Application No. 10-2006-0037805; Sep. 10, 2007.
English translation of Notice of Allowance for Korean Application No. 10-2006-0037805; Sep. 10, 2007.
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Choi Jung-Dal
Kang Chang-Seok
Sim Jae-Sung
Ho Tu-Tu V
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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