Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-10-31
2006-10-31
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C327S157000, C327S536000, C327S537000
Reexamination Certificate
active
07130225
ABSTRACT:
A charge pump can advantageously include a PMOS transistor that functions as a first current source and an NMOS transistor that functions as a second current source. The transistors can be appropriately sized to provide low parasitic charge injection. Capacitors can function as low impedance voltage sources for rapidly turning on the PMOS and NMOS transistors, whereas switches can be used for quickly turning off the PMOS and NMOS transistors. The capacitors can be charged using a current mirror circuit, thereby facilitating the matching of currents of the transistors and ensuring low power consumption. Alternatively, an operational amplifier can be used in the charge pump to provide high output voltage range and superior current matching.
REFERENCES:
patent: 6124741 (2000-09-01), Arcus
patent: 6586976 (2003-07-01), Yang
Atheros Communications Inc.
Bever Hoffman & Harms LLP
Dinh Son T.
Harms Jeanette S.
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