Charge pump circuits having floating wells

Details Charge pump circuits having floating wells Charge pump circuits having floating wells

1998-04-09

1999-11-16

Nelms, David

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36518518, 327390, 327589, G11C 700

Patent

active

059869470

ABSTRACT:
The well regions of pumping units of charge pump circuits are maintained electrically floating. By maintaining the wells electrically floating, reduced impact from the body effect may be obtained. More specifically, integrated circuit charge pump circuits boost a first voltage from a voltage source to a second voltage at an output terminal. The charge pump circuits include a plurality of pumping units in an integrated circuit substrate of first conductivity type, that are serially connected between the voltage source and the output terminal. Each of the pumping units includes a well region of second conductivity type in the integrated circuit substrate of first conductivity type. The well region of second conductivity type is electrically floating. Each pumping unit also includes a transistor of the first conductivity type in the floating well region of second conductivity type, and a capacitor that is electrically connected to the transistor of the first conductivity type in the floating well region of second conductivity type.

REFERENCES:
Dickson, "On-Chip High-Voltage Generation in MNOS Integrated Circuits Using an Improved Voltage Multiplier Technique", IEEE Journal of Solid-State Circuits, vol. SC-11, No. 3, Jun. 1976, pp. 374-378.

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