Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Patent
1997-06-09
1999-01-19
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
257291, 257300, 257428, 324769, H01L 2358
Patent
active
058616349
ABSTRACT:
A method and structure for the evaluation of the density of charge induced to a semiconductor substrate during exposure to radiation as a result of integrated circuits processing procedures such as ion implantation and plasma etching is disclosed. A plurality of stacked gate field effect transistors, wherein each stacked has a charge collection capacitor attached to the gate, is fabricated on a semiconductor substrate. Each charge collection capacitor has an area that is different from every other charge collection capacitor. The to substrate is exposed to a radiation source. The threshold voltage for each of the stacked gate field effect transistors is measured. The difference in threshold voltage for the stacked gate transistors is proportional to the amount of charge induced during the exposure to the radiation and the density of the charge induced by the exposure to the radiation can be calculated from the comparison of the threshold voltage and the area of the charge collection capacitors.
REFERENCES:
patent: 4196389 (1980-04-01), Kelly et al.
patent: 5315145 (1994-05-01), Lukaszek
patent: 5396169 (1995-03-01), Buehler et al.
patent: 5693947 (1997-12-01), Morton
patent: 5777728 (1998-07-01), Schiller
Hsu Ching-Hsiang
Liang Mong-Song
Lin Chrong-Jung
Ackerman Stephen B.
Crane Sara
Knowles Bill
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Charge collector structure for detecting radiation induced charg does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Charge collector structure for detecting radiation induced charg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge collector structure for detecting radiation induced charg will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1248607