Charge balance field effect transistor

Details Charge balance field effect transistor Charge balance field effect transistor

2008-07-01

2008-07-01

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C257S330000, C257S332000, C257SE29201

Reexamination Certificate

active

07393749

ABSTRACT:
A field effect transistor is formed as follows. A semiconductor region of a first conductivity type with an epitaxial layer of a second conductivity extending over the semiconductor region is provided. A trench extending through the epitaxial layer and terminating in the semiconductor region is formed. A two-pass angled implant of dopants of the first conductivity type is carried out to thereby form a region of first conductivity type along the trench sidewalls. A threshold voltage adjust implant of dopants of the second conductivity type is carried out to thereby convert a conductivity type of a portion of the region of first conductivity type extending along upper sidewalls of the trench to the second conductivity type. Source regions of the first conductivity type flanking each side of the trench are formed.

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International Search Report of Jan. 14, 2008 for application No. PCT/US06/22474.
Written Opinion of Jan. 14, 2008 for application No. PCT/US06/22474.

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