Characterizing resist line shrinkage due to CD-SEM inspection

Details Characterizing resist line shrinkage due to CD-SEM inspection Characterizing resist line shrinkage due to CD-SEM inspection

2007-10-23

2007-10-23

Berman, Jack I. (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Electron microscope type

C250S306000, C250S307000, C250S310000, C250S492220, C250S492300, C430S310000, C430S313000, C430S314000, C430S317000, C430S323000, C356S634000, C356S635000, C356S636000, C438S008000, C438S016000, C438S584000

Reexamination Certificate

active

10886387

ABSTRACT:
A CD-SEM (critical dimension-scanning electron microscope) system may utilize a technique for characterizing and reducing shrinkage carryover due to CD-SEM measurements. The system may identify the affects of CD-SEM measurements on the resist and adjust the operating parameters for a particular resist to avoid or significantly reduce shrinkage carryover. In this manner, the system may obtain more reliable CD measurements and avoid damage to the measured feature.

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