Characterizing an electron beam treatment apparatus

Details Characterizing an electron beam treatment apparatus Characterizing an electron beam treatment apparatus

2006-05-16

2006-05-16

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S306000, C250S307000, C250S310000, C250S492100, C250S492300

Reexamination Certificate

active

07045798

ABSTRACT:
One embodiment of the present invention is a method for characterizing an electron beam treatment apparatus that includes: (a) e-beam treating one or more of a predetermined type of wafer or substrate utilizing one or more sets of electron beam treatment para meters; (b) making post-electron beam treatment measurements of intensity of a probe beam reflected from the surface of the one or more wafers in which thermal and/or plasma waves have been induced; and (c) developing data from the post-electron beam treatment measurements that provide insight into performance of the electron beam treatment apparatus.

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