Channel-type stack capacitor for DRAM cell

Details Channel-type stack capacitor for DRAM cell Channel-type stack capacitor for DRAM cell

1998-04-14

2000-02-01

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

257309, H01L 218242

Patent

active

060202351

ABSTRACT:
The electrode of a storage capacitor of a DRAM cell lies diagonally along the memory cell. The diagonal layout makes the length of the capacitor longer than either the x-dimension or the y-dimension of the memory cell, thus increasing the storage capacitance.

REFERENCES:
patent: 5045899 (1991-09-01), Arimoto

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