Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-09-02
2000-12-19
Smith, Matthew
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438514, 438682, H01L 21336
Patent
active
061626937
ABSTRACT:
A field effect transistor having a doped region in the substrate immediately underneath the gate of the transistor and interposed between the source and drain of the transistor is provided. The doped region has a retrograde dopant profile such that the doping concentration immediately adjacent the gate is selected to allow for the formation of a channel when a threshold voltage is applied to the gate thereby eliminating the need for an enhancement doping step during formation of the transistor. The retrograde doping profile increases with the depth into the substrate which inhibits stray currents from traveling between the source and drain of the transistor in the absence of the formation of a channel as a result of voltage being applied to the gate of the transistor.
REFERENCES:
patent: 4499652 (1985-02-01), Shrivastava
patent: 5679594 (1997-10-01), Rodde et al.
patent: 5773863 (1998-06-01), Burr et al.
patent: 5946579 (1999-08-01), Fulford, Jr. et al.
Wang Zhongze
Yang Rongsheng
Anya Igwe U.
Micro)n Technology, Inc.
Smith Matthew
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