Channel dopant implantation with automatic compensation for vari

Details Channel dopant implantation with automatic compensation for vari Channel dopant implantation with automatic compensation for vari

1996-12-30

2000-02-01

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438298, 438185, 438 45, H01L 21336

Patent

active

060202440

ABSTRACT:
An improved well boosting implant which provides better characteristics than traditional halo implants particularly for short channel devices (e.g., 0.25 microns or less). In effect, an implant is distributed across the entire channel with higher concentrations occurring in the center of the channel of the devices having gate lengths less than the critical dimension. This is done by using very large tilt angles (e.g., 30-50.degree.) with a relatively light dopant species and by using a relatively high energy when compared to the traditional halo implants.

REFERENCES:
patent: 5320974 (1994-06-01), Hori et al.
patent: 5543337 (1996-08-01), Yeh et al.
patent: 5593907 (1997-01-01), Anjum et al.
A New Half-Micron p-Channel MOSFET with LATIPS (LArge-Tilt-Angle Implanted Punchthrough Stopper), Hori & Kurimoto, IEDM 88, geginning at p. 394.

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