Chamber monitoring and adjustment by plasma RF metrology

Details Chamber monitoring and adjustment by plasma RF metrology Chamber monitoring and adjustment by plasma RF metrology

1996-05-08

2000-04-18

Russel, Jeffrey E.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

118671, 118690, 118723E, 134 11, 427 10, 427585, C23C 1652, H05H 146

Patent

active

060512849

ABSTRACT:
A method and apparatus for monitoring a parameter of the RF power applied to a plasma-enhanced chemical vapor deposition (PECVD) chamber. The parameter is used to monitor an aspect of the chamber or a process in the chamber. In particular, the parameter can be used to determine whether the susceptor is properly aligned, determine the spacing of the susceptor from the gas discharge head, determine whether the wafer is properly aligned on the susceptor, determine whether there has been any deterioration of the susceptor or the gas discharge head, and determine whether a chamber clean operation is complete.

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