Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-01-04
2005-01-04
Deo, Duy-Vu N. (Department: 1765)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C257S005000, C438S380000
Reexamination Certificate
active
06838691
ABSTRACT:
A method of manufacturing chalcogenide memory in a semiconductor substrate. The method includes the steps of forming a N+ epitaxy layer on the semiconductor substrate; forming a N− epitaxy layer on the N+ epitaxy layer; forming a first STI in the N+ and N− epitaxy layers to isolate a predetermined word line region; forming a second STI in the N− epitaxy layer to isolate a predetermined P+ doped region; forming a dielectric layer on the N− epitaxy layer; patterning the dielectric layer to form a first opening and performing a N+ doping on the N− epitaxy layer via the first opening such that a N+ doped region is formed in the N− epitaxy layer and connected to the N+ epitaxy layer; patterning the dielectric layer to form a second opening and performing a P+ doping on the N− epitaxy layer such that a P+ doped region is formed; forming contact plugs in the first opening and the second opening respectively; and forming an electrode on each contact plug, wherein the electrode includes a lower electrode, a chalcogenide layer and an upper electrode.
REFERENCES:
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 6284643 (2001-09-01), Reinberg
patent: 6653195 (2003-11-01), Gonzalez et al.
Chan Kwang-Yang
Fan Tso-Hung
Liu Mu-Yi
Lu Tao-Cheng
Yeh Yen-Hung
Deo Duy-Vu N.
Fish & Richardson P.C.
Macronix International Co. Ltd.
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