Ceramic semiconductor package having varying conductive bonds

Details Ceramic semiconductor package having varying conductive bonds Ceramic semiconductor package having varying conductive bonds

1994-04-18

1996-04-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

With heat sink means

257666, 257668, 257705, 257706, 257707, 257712, 257713, 257717, 361723, H01L 3902, H01L 2302, H05K 702

Patent

active

055106498

ABSTRACT:
A semiconductor chip package is manufactured comprising a heatsink bonded to an aluminum nitride insulative layer by a thermally conductive and electrically nonconductive epoxy. The aluminum nitride insulative layer is bonded to several portions of a leadframe by an epoxy which is thermally conductive and electrically nonconductive and another epoxy which is thermally conductive and electrically conductive. A semiconductor die is bonded to the aluminum nitride insulative layer by a thermally conductive and electrically conductive epoxy.

REFERENCES:
patent: 4535350 (1985-08-01), Goodrich et al.
patent: 4651192 (1987-03-01), Matsushita et al.
patent: 5057905 (1991-10-01), Matsumoto et al.

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