Cell structure of an improved CMOS static RAM and its fabricatio

Details Cell structure of an improved CMOS static RAM and its fabricatio Cell structure of an improved CMOS static RAM and its fabricatio

1997-08-05

2000-01-18

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257383, 257384, 257754, 257903, H01L 2976, H01L 2994, H01L 2348, H01L 2711

Patent

active

060159960

ABSTRACT:
A static RAM which is a CMOS static RAM having first and second load transistors, first and second driver transistors, and first and second switching transistors in one memory cell includes: a laminated structure of a first polysilicon layer, a silicide layer and a second polysilicon layer, forming the gate regions of the second load and driver transistors in a body; an interconnection layer comprising a laminated structure of the silicide layer and the second polysilicon layer to form a p-n junction between the drain regions of the first load and driver transistors; and one contact for making the gate regions and the interconnection layer in a body by the second polysilicon layer.

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