Cell capacitors, memory cells, memory arrays, and method of fabr

Details Cell capacitors, memory cells, memory arrays, and method of fabr Cell capacitors, memory cells, memory arrays, and method of fabr

1998-12-03

2000-11-28

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257296, H01L 2718, H01L 2976, H01L 2994

Patent

active

061539031

ABSTRACT:
A masking and etching technique during the formation of a memory cell capacitor which utilizes an etching technique to utilize a maximum surface area over the memory cell and to form thin spacers to pattern separation walls between capacitors. This technique results in efficient space utilization which, in turn, results in an increase in the surface area of the capacitor for an increased memory cell capacitance.

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