Cell based integrated circuit and unit cell architecture...

Details Cell based integrated circuit and unit cell architecture... Cell based integrated circuit and unit cell architecture...

2005-06-14

2005-06-14

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S128000, C438S129000, C438S199000, C438S213000

Reexamination Certificate

active

06905931

ABSTRACT:
In a unit cell, a first conductive type active region and a second conductive type active region are provided. Those two active regions extend in a first direction. Each of the active regions has first and second ends thereof. The first end of the second conductive type active region opposes the second end of the first conductive type active region. A poly-silicon pattern is provided to extend in the first direction across the first conductive type active region and second conductive type active region. A first contact region is arranged adjacent the first end of the first conductive type active region in the first direction. A second contact region is arranged adjacent the second end of the second conductive type active region in the first direction.

REFERENCES:
patent: 4516312 (1985-05-01), Tomita
patent: 4595940 (1986-06-01), Gandini
patent: 4750026 (1988-06-01), Kuninobu et al.
patent: 5898194 (1999-04-01), Gheewala
patent: 57-45948 (1982-03-01), None
patent: 1-274450 (1989-11-01), None
Wolf et al., Silicon Processing for the VLSI Era, vol. 2, copyright 1990, pp. 318-319.

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