Cell arrays of memory devices having extended source...

Details Cell arrays of memory devices having extended source... Cell arrays of memory devices having extended source...

2006-07-11

2006-07-11

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000

Reexamination Certificate

active

07075142

ABSTRACT:
A cell array of a flash memory device includes extended source strapping regions. The cell array includes a device isolation layer and active regions. The device isolation layer is formed in a semiconductor substrate, and the active regions are defined by the device isolation layer. Word lines cross over the active regions, and a common source line electrically connects the active regions between two word lines of word line pairs. A source strapping region is defined between the two word lines of the word line pairs. The source strapping region crosses multiple active regions.

REFERENCES:
patent: 5041886 (1991-08-01), Lee
patent: 5643812 (1997-07-01), Park
patent: 5770874 (1998-06-01), Egawa
patent: 5973374 (1999-10-01), Longcor
patent: 6275414 (2001-08-01), Randolph et al.
patent: 6392267 (2002-05-01), Shrivastava et al.
patent: 6541324 (2003-04-01), Wang
patent: 6867082 (2005-03-01), Kim et al.
patent: 6949791 (2005-09-01), Abedifard
patent: 2002-0097284 (2002-12-01), None
patent: 2003-0036111 (2003-05-01), None
patent: WO 01/88985 (2001-11-01), None
Notice to Submit a Response/Amendment to the Examination Report for Korean patent application No. 10-2004-0008395 mailed on Sep. 24, 2005

Affiliated with

Also associated with

Rating

Cell arrays of memory devices having extended source... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cell arrays of memory devices having extended source..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cell arrays of memory devices having extended source... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3524321