Cell array structure for a ferroelectric semiconductor memory an

Details Cell array structure for a ferroelectric semiconductor memory an Cell array structure for a ferroelectric semiconductor memory an

1997-08-22

1998-12-01

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365210, G11C 1122

Patent

active

058448322

ABSTRACT:
A ferroelectric semiconductor random access memory (RAM) is disclosed, which comprises a memory cell array having a plurality of memory cells arranged in a matrix, each of the memory cells having an access transistor and a ferroelectric capacitor, a plurality of bit lines of open bit line structure connected with corresponding sense amplifiers, and a plurality of reference cells arranged symmetrically against the sense amplifiers for providing reference voltage to the reference input terminals of the sense amplifiers toe sense the logical states of the data stored in the memory cells. In this device, the reference voltage is provided from one of the reference cells.

REFERENCES:
patent: 5640030 (1997-06-01), Kenney

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