Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-01
1998-10-13
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438614, 438615, 438616, 438686, 438687, 257704, 257710, H01L 2144
Patent
active
058211616
ABSTRACT:
The present invention relates generally to a new scheme of providing a seal for semi-conductor substrates and chip carriers. More particularly, the invention encompasses a structure and a method that uses a multi-layer metallic seal to provide protection to chips on a chip carrier. This multi-layer metal seal provides both enhanced hermeticity lifetime and environmental protection. For the preferred embodiment the multi-layer metallic seal is a two layer, solder structure which is used to create a low cost, high reliability, hermetic seal for the module. This solder structure has a thick high melting point temperature region that is attached to a cap, and a thin interconnecting region of lower melting point temperature region for sealing the substrate to the cap.
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Bolde Lannie R.
Covell II James H.
Edwards David L.
Goldmann Lewis S.
Gruber Peter A.
Ahsan Aziz M.
International Business Machines - Corporation
Niebling John
Zarneke David A.
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