Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-06-21
2011-06-21
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S589000, C438S926000, C438S299000, C257SE21444
Reexamination Certificate
active
07964487
ABSTRACT:
An integrated circuit with stress enhanced channels, a design structure and a method of manufacturing the integrated circuit is provided. The method includes forming a dummy gate structure on a substrate and forming a trench in the dummy gate structure. The method further includes filling a portion of the trench with a strain inducing material and filling a remaining portion of the trench with gate material.
REFERENCES:
patent: 6087231 (2000-07-01), Xiang et al.
patent: 6171910 (2001-01-01), Hobbs et al.
patent: 6225173 (2001-05-01), Yu
patent: 6278164 (2001-08-01), Hieda et al.
patent: 6278165 (2001-08-01), Oowaki et al.
patent: 6423619 (2002-07-01), Grant et al.
patent: 6642563 (2003-11-01), Kanaya
patent: 6664592 (2003-12-01), Inumiya et al.
patent: 6852559 (2005-02-01), Kwak et al.
patent: 6908801 (2005-06-01), Saito
patent: 6943087 (2005-09-01), Xiang et al.
patent: 7033869 (2006-04-01), Xiang et al.
patent: 7074623 (2006-07-01), Lochtefeld et al.
patent: 7138649 (2006-11-01), Currie et al.
patent: 7265428 (2007-09-01), Aoyama
patent: 7301180 (2007-11-01), Lee et al.
patent: 7435636 (2008-10-01), Hanafi
patent: 7569442 (2009-08-01), Ouyang et al.
patent: 7602013 (2009-10-01), Miyano et al.
patent: 7671394 (2010-03-01), Booth et al.
patent: 2003/0065809 (2003-04-01), Byron
patent: 2007/0032009 (2007-02-01), Currie et al.
patent: 2008/0030254 (2008-02-01), Arsovski et al.
patent: 2008/0054365 (2008-03-01), Aoyama
patent: 2008/0061369 (2008-03-01), Shimizu et al.
patent: 2008/0061370 (2008-03-01), Matsuo
patent: 2008/0079084 (2008-04-01), Hanafi
patent: 2009/0011563 (2009-01-01), Hanafi
patent: 2009/0221447 (2009-09-01), Mur et al.
patent: 2009/0242936 (2009-10-01), Cheng et al.
patent: 2009/0302412 (2009-12-01), Cheng et al.
patent: 2010/0001323 (2010-01-01), Tateshita
patent: 2010/0038705 (2010-02-01), Doris et al.
patent: 2010/0044783 (2010-02-01), Chuang et al.
patent: 2010/0048010 (2010-02-01), Chen et al.
patent: 2010/0055923 (2010-03-01), Chang
patent: 0-397-987 (1990-03-01), None
patent: 2001-093987 (2001-04-01), None
PCT/US/ 09/45788, International Search Report and Written Opinion of the International Searching Authority, issued Jul. 21, 2009.
Cheng Kangguo
Yang Haining S
International Business Machines - Corporation
Petrokaitis Joseph
Roberts Mlotkowski Safran & Cole P.C.
Wilczewski Mary
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