Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-03-23
2009-10-06
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S300000, C438S689000, C438S714000, C257SE21090, C257SE21430, C257SE21461
Reexamination Certificate
active
07598178
ABSTRACT:
The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.
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Kim Yihwan
Kodali Rohini
Samoilov Arkadii V.
Zojaji Ali
Applied Materials Inc.
Dugan & Dugan PC
Ghyka Alexander G
Nikmanesh Seahvosh J
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