Carbon precursors for use during silicon epitaxial film...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S300000, C438S689000, C438S714000, C257SE21090, C257SE21430, C257SE21461

Reexamination Certificate

active

07598178

ABSTRACT:
The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.

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