Carbon nanotube interconnect

Details Carbon nanotube interconnect Carbon nanotube interconnect

2006-08-22

2006-08-22

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S691000, C438S800000, C438S626000

Reexamination Certificate

active

07094679

ABSTRACT:
Method and system for fabricating an electrical interconnect capable of supporting very high current densities (106–1010Amps/cm2), using an array of one or more carbon nanotubes (CNTs). The CNT array is grown in a selected spaced apart pattern, preferably with multi-wall CNTs, and a selected insulating material, such as SiOwor SiuNv, is deposited using CVD to encapsulate each CNT in the array. An exposed surface of the insulating material is planarized to provide one or more exposed electrical contacts for one or more CNTs.

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