Carbon nanotube gate field effect transistor

Details Carbon nanotube gate field effect transistor Carbon nanotube gate field effect transistor

2005-02-08

2005-02-08

Chambliss, Alonzo (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S196000, C438S587000, C438S591000

Reexamination Certificate

active

06852582

ABSTRACT:
The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.

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