Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-26
2011-04-26
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000, C257S071000, C257S296000, C257S300000, C257SE27084, C257SE27092, C257SE23039, C257SE51040, C438S243000, C438S386000, C438S775000, C438S776000, C977S936000, C977S943000, C977S948000
Reexamination Certificate
active
07932549
ABSTRACT:
A trench-type storage device includes a trench in a substrate (100), with bundles of carbon nanotubes (202) lining the trench and a trench conductor (300) filling the trench. A trench dielectric (200) may be formed between the carbon nanotubes and the sidewall of the trench. The bundles of carbon nanotubes form an open cylinder structure lining the trench. The device is formed by providing a carbon nanotube catalyst structure on the substrate and patterning the trench in the substrate; the carbon nanotubes are then grown down into the trench to line the trench with the carbon nanotube bundles, after which the trench is filled with the trench conductor.
REFERENCES:
patent: 6286226 (2001-09-01), Jin
patent: 6333598 (2001-12-01), Hsu et al.
patent: 6340822 (2002-01-01), Brown et al.
patent: 6515325 (2003-02-01), Farnworth et al.
patent: 6566704 (2003-05-01), Choi et al.
patent: 6599808 (2003-07-01), Kim et al.
patent: 2001/0012658 (2001-08-01), Widmann et al.
patent: 2002/0048143 (2002-04-01), Lee et al.
patent: 2002/0130388 (2002-09-01), Stamper
patent: 2002/0151150 (2002-10-01), Bernstein et al.
patent: 2002/0159944 (2002-10-01), Smalley et al.
patent: 2002/0163079 (2002-11-01), Awano
patent: 2003/0096104 (2003-05-01), Tobita et al.
patent: 2003/0100189 (2003-05-01), Lee et al.
patent: 2003/0132461 (2003-07-01), Roesner et al.
patent: 2003/0165418 (2003-09-01), Ajayan et al.
patent: 2003/0179559 (2003-09-01), Engelhardt et al.
patent: 2003/0211724 (2003-11-01), Haase
patent: 2004/0043629 (2004-03-01), Lee et al.
patent: 2004/0137730 (2004-07-01), Kim et al.
patent: 2005/0062034 (2005-03-01), Dubin
Yoshikazu Homma, Growth of Suspended carbon nanotube networks on 100-nm scale silicon pillars, Applied Physics Letters, vol. 81, No. 12, Sep. 16, 2002, pp. 2261-2263.
Yoshikazu Homma, Growth of suspended carbon nanotube networks on 100-nm -scale silicon pillars, Sep. 16, 2002 , vol. 81, No. 12, pp. 2261-2263 (Applied physics letters).
Yoshikazu Homma, Growth of suspended carbon nanotube networks on 100-nm scale pillars, Sep. 16, 2002, Applied physics letters, vol. 81, No. 12, pp. 2261-2263.
Yoshikazu Hmma, Growth of suspended carbon nanotube networks on 100-nm scale pillars, Sep. 16, 2002, Applied physics letters, vol. 81, No. 12, pp. 2261-2263.
International Search Report and Written Opinion Filing Date: Dec. 18, 2003.
Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Koburger, III Charles W.
Cai Yuanmin
Gebreyesus Yosef
Gurley Lynne A
International Business Machines - Corporation
LandOfFree
Carbon nanotube conductor for trench capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Carbon nanotube conductor for trench capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Carbon nanotube conductor for trench capacitors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2625498