Capping structure for enhancing dR/R of the MTJ device

Details Capping structure for enhancing dR/R of the MTJ device Capping structure for enhancing dR/R of the MTJ device

2004-06-15

2008-11-11

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C427S132000, C257S421000, C257SE43005, C257SE43006

Reexamination Certificate

active

07449345

ABSTRACT:
An MTJ in an MRAM array or in a TMR read head is comprised of a capping layer with a lower inter-diffusion barrier layer, an intermediate oxygen gettering layer, and an upper metal layer that contacts a top conductor. The composite capping layer is especially useful with a moderate spin polarization free layer such as a NiFe layer with a Fe content of about 17.5 to 20 atomic %. The capping layer preferably has a Ru/Ta/Ru configuration in which the lower Ru layer is about 10 to 30 Angstroms thick and the Ta layer is about 30 Angstroms thick. As a result, a high dR/R of about 40% is achieved with low magnetostriction less than about 1.0 E−6 in an MTJ in an MRAM array. Best results are obtained with an AlOx tunnel barrier layer formed by an in-situ ROX process on an 8 to 10 Angstrom thick Al layer.

REFERENCES:
patent: 6127045 (2000-10-01), Gill
patent: 6153319 (2000-11-01), Hasegawa
patent: 6266218 (2001-07-01), Carey et al.
patent: 6301089 (2001-10-01), Saito et al.
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6600638 (2003-07-01), Gill
patent: 6624987 (2003-09-01), Hayashi et al.
patent: 6639291 (2003-10-01), Sin et al.
patent: 6657825 (2003-12-01), Ho et al.
patent: 6674617 (2004-01-01), Gill
patent: 6700759 (2004-03-01), Knapp et al.
patent: 6703654 (2004-03-01), Horng et al.
patent: 6992910 (2006-01-01), Ju et al.
patent: 7001680 (2006-02-01), Gill
patent: 7053429 (2006-05-01), Katti
patent: 2001/0024346 (2001-09-01), Terunuma et al.
patent: 2002/0054462 (2002-05-01), Sun et al.
patent: 2002/0058158 (2002-05-01), Odagawa et al.
patent: 2003/0030944 (2003-02-01), Lin et al.
patent: 2003/0053268 (2003-03-01), Lin et al.
patent: 2003/0053270 (2003-03-01), Gill
patent: 2003/0152810 (2003-08-01), Kawai et al.
patent: 2003/0185046 (2003-10-01), Nishiyama et al.
patent: 2004/0101978 (2004-05-01), Linn et al.
patent: 2004/0146686 (2004-07-01), Kim et al.
patent: 2004/0150922 (2004-08-01), Kagami et al.
patent: 2004/0188733 (2004-09-01), Asao et al.
patent: 2005/0014295 (2005-01-01), Sharma
patent: 2005/0024790 (2005-02-01), Pinarbasi
patent: 2005/0040447 (2005-02-01), Fukuzumi
patent: 2005/0048775 (2005-03-01), Donohue
Co-pending U.S. Appl. No. 10/844,171, filed May 12, 2004, assigned to the same assignee.
Co-pending U.S. Appl. No. 10/849,310, filed May 19, 2004, assigned to the same assignee.
“Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited),” by S.S. Parkin et al., Jrnl. of Applied Physics, vol. 85, No. 8, Apr. 15, 1999, pp. 5828-5833.
“Progress and Outlook for MRAM Technology”, by S.Tehrani et al, IEEE Trans. on Magnetics, vol. 35, No. 5, Sep. 1999, pp. 2814-2819.
“A 0.18um 4Mb Toggling MRAM,” by M. Durlam et al., IEEE 2003, 0-7803-7873—Mar. 2003.
“Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25ferromagnetic electrodes,” by Xiu-Feng Han et al., Applied Physics Letters, vol. 77, No. 2, Jul. 10, 2000, pp. 283-285.
“High-Performance MRAM Technology with an Improved Magnetic Tunnel Junction Material,” by M. Motoyoshi et al., 2002 Symp. On VLSI Tech. Digest of Tech. Papers, pp. 212-213.
“Oxygen as a surfactant in the growth of giant magneto-resistance spin valves,” by W. F. Egelhoff, Jr., Jrnl. of Applied Physics, vol. 82, No. 12, Dec. 15, 1997, pp. 6142-6151.

Affiliated with

Also associated with

Rating

Capping structure for enhancing dR/R of the MTJ device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capping structure for enhancing dR/R of the MTJ device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capping structure for enhancing dR/R of the MTJ device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4042841