Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-09-19
2006-09-19
Zarneke, David (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S586000, C438S587000, C438S303000, C438S624000, C438S637000, C257S640000, C257S401000, C257S315000, C257S295000
Reexamination Certificate
active
07109101
ABSTRACT:
In the fabrication of semiconductor devices using the PECVD process to deposit hardmask material such as amorphous carbon, structure and process are described for reducing migration of species from the amorphous carbon which can damage an overlying photoresist. In one embodiment useful to 248 nm and 193 nm photolithography exposure wavelengths, amorphous carbon is plasma-deposited on a substrate to pre-defined thickness and pre-defined optical properties. A SiON layer is combined with a silicon-rich oxide layer, a silicon-rich nitride layer or a TEOS layer to create a capping layer resistant to species-migration. Layers are formulated to pre-determined thicknesses, refractive indices and extinction coefficients. The capping stacks constitute an effective etch mask for the amorphous carbon; and the hardmask properties of the amorphous carbon are not compromised. The disclosure has immediate application to fabricating polysilicon gates.
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Dakshina-Murthy Srikanteswara
Junker Kurt H.
Patterson Kyle
Wright Marilyn I.
AMD Inc.
Anya Igwe U.
Graves Charles E.
Motorola Inc.
Zarneke David
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