Capping layer for a semiconductor device and a method of...

Details Capping layer for a semiconductor device and a method of... Capping layer for a semiconductor device and a method of...

2007-03-27

2007-03-27

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S754000, C438S756000, C438S757000

Reexamination Certificate

active

10319734

ABSTRACT:
Numerous embodiments of a method and apparatus for a capping layer are disclosed. In one embodiment, a method of forming a capping layer for a semiconductor device comprises forming one or more layers on at least a portion of the top surface of a semiconductor device, substantially planarizing at least one of the one or more layers, annealing at least a portion of the semiconductor device, and removing a substantial portion of the one or more layers, using one or more etching processes.

REFERENCES:
patent: 5268330 (1993-12-01), Givens et al.
patent: 6156654 (2000-12-01), Ho et al.
patent: 6368915 (2002-04-01), Montree et al.
patent: 6495437 (2002-12-01), Yu
patent: 6524920 (2003-02-01), Yu
patent: 6577011 (2003-06-01), Buchwalter et al.
patent: 6624489 (2003-09-01), Chong et al.
patent: 2003/0151098 (2003-08-01), Nishida et al.

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