Capping before barrier-removal IC fabrication method

Details Capping before barrier-removal IC fabrication method Capping before barrier-removal IC fabrication method

2010-09-03

2011-10-25

Coleman, William D (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C451S064000, C156S345120

Reexamination Certificate

active

08043958

ABSTRACT:
Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

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