Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-10-14
1999-04-27
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257766, H01L 2348
Patent
active
058982221
ABSTRACT:
The present invention relates generally to a new structure and method for capped copper electrical interconnects. More particularly, the invention encompasses a novel structure in which one or more of the copper electrical interconnects within a semiconductor substrate are capped to obtain a robust electrical interconnect structure. A method for obtaining such capped copper electrical interconnect structure is also disclosed. These capped interconnects can be a single layer or multi-layer structures. Similarly, the interconnect structure that is being capped can itself be composed of single or multi-layered material.
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Farooq Mukta Shaji
Kaja Suryanarayana
Perfecto Eric Daniel
White George Eugene
Ahsan Aziz M.
International Business Machines - Corporation
Prenty Mark V.
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